Mass Spectrometric and Kinetic Study of Low‐Pressure Chemical Vapor Deposition of Si3 N 4 Thin Films from SiH2Cl2 and NH 3-Reference-Cited by-同舟云学术

Mass Spectrometric and Kinetic Study of Low‐Pressure Chemical Vapor Deposition of Si3 N 4 Thin Films from SiH2Cl2 and NH 3

Published:1994-12-01 Issue:12 Volume:141 Page:3505-3511
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Sorita Tetsuji¹²,Satake Tetsuya¹²,Adachi Hiroshi¹²,Ogata Tamotsu¹²,Kobayashi Kiyoteru¹²

Affiliation:

1. Mitsubishi Electric Corporation, Central Research Laboratory, 1‐1, Tsukaguchi Honmachi 8‐chome, Amagasaki, Hyogo 661, Japan

2. Mitsubishi Electric Corporation, ULSI Laboratory, 4‐1, Mizuhara, Itami, Hyogo 664, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2059361/pdf

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