Simulation of Chemical Downstream Etch Systems: Correlation of the Effects of Operating Conditions on Wafer Etch Rate and Uniformity

Author:

Vosen S. R.1,Meeks E.1,Larson R. S.1,Shon J. W.1

Affiliation:

1. Sandia National Laboratories, Livermore, California 94551‐0969

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF3/O2 mixtures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2018-03

2. Insights to scaling remote plasma sources sustained in NF3mixtures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-05

3. A computational framework for modelling grain-structure evolution in three dimensions;Philosophical Magazine;2003-10

4. Production of Fluorine-Containing Molecular Species in Plasma-Generated Atomic F Flows;The Journal of Physical Chemistry A;2003-08-30

5. Remote microwave plasma source for cleaning chemical vapor deposition chambers: Technology for reducing global warming gas emissions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

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