Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF3/O2 mixtures-Reference-Cited by-同舟云学术

Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF3/O2 mixtures

Published:2018-03 Issue:2 Volume:36 Page:021305
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Huang Shuo¹,Volynets Vladimir²,Hamilton James R.³,Nam Sang Ki²,Song In-Cheol²,Lu Siqing²,Tennyson Jonathan³,Kushner Mark J.¹

Affiliation:

1. Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109-2122

2. Samsung Electronics Co., Ltd., 129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-742, South Korea

3. Department of Physics and Astronomy, University College London, London WC1E 6BT, United Kingdom

Funder

Samsung Electronics Co. Ltd

Nova Scotia Department of Energy

U.S. Department of Energy

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

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