Recovery of Si Surfaces Subjected to Reactive Ion Etching Using Rapid Thermal Annealing-Reference-Cited by-同舟云学术

Recovery of Si Surfaces Subjected to Reactive Ion Etching Using Rapid Thermal Annealing

Published:1988-04-01 Issue:4 Volume:135 Page:1037-1038
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Fonash S. J.¹²³,Mu X. C.¹²³,Chakravarti S.¹²³,Rathbun L. C.¹²³

Affiliation:

1. Center for Electronic Materials and Devices and Engineering Science Program, The Pennsylvania State University, University Park, Pennsylvania 16802

2. IBM East Fishkill Facility, Hopewell Junction, New York 12533

3. National Research Resource Facility for Submicron Structures, Knight Laboratory, Cornell University Ithaca New York 14853

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2095768/pdf

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1. Fluoropolymer Films on Silicon from Reactive Ion Etching;A User's Guide to Ellipsometry;1993

2. Reactive Ion Etching of Silicon and Silicon Dioxide in CF 4 Plasmas Containing H 2 or C 2 F 4 Additives;Journal of The Electrochemical Society;1991-09-01

3. Removal of fluorocarbon residue on Si with an electron cyclotron resonance excited Ar plasma;Journal of Applied Physics;1991-08

4. Removal of Fluorocarbon Residues on CF 4 / H 2 Reactive‐Ion‐Etched Silicon Surfaces Using a Hydrogen Plasma;Journal of The Electrochemical Society;1991-01-01

5. An Overview of Dry Etching Damage and Contamination Effects;Journal of The Electrochemical Society;1990-12-01