Damage of Low-k and Ultralow-k Dielectrics from Reductive Plasma Discharges Used for Photoresist Removal-Reference-Cited by-同舟云学术

Damage of Low-k and Ultralow-k Dielectrics from Reductive Plasma Discharges Used for Photoresist Removal

Published:2005 Issue:7 Volume:152 Page:G528
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Moore Darren L.,Carter Richard J.,Cui Hao,Burke Peter,Gu S. Q.,Peng Huagen,Valley Richard S.,Gidley David W.,Waldfried Carlo,Escorcia Orlando

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Low-kSi–O–C–H composite films prepared by plasma-enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor

2. Effect of oxygen plasma exposure of porous spin-on-glass films

3. Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment

4. Effects of H[sub 2] plasma treatment on low dielectric constant methylsilsesquioxane

5. Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

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