Optimizing HBr-Br[sub 2]-H[sub 2]O Etchants to Form Low Defect Regrowth Interfaces for Highly Reliable InGaAsP/InP Buried-Heterostructure Lasers-Reference-Cited by-同舟云学术

Optimizing HBr-Br[sub 2]-H[sub 2]O Etchants to Form Low Defect Regrowth Interfaces for Highly Reliable InGaAsP/InP Buried-Heterostructure Lasers

Published:2003 Issue:2 Volume:150 Page:G117
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Shinoda K.,Taike A.,Sato H.,Uchiyama H.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference15 articles.

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3. Eaves Structures on (100) InP and InP/InGaAsP/InP Heterostructures

4. Chemical Etching of InGaAsP / InP DH Wafer

5. A. J. Bard, R. Parsons, and J. Jordan,Standard Potentials in Aqueous Solution, Marcel Dekker, Inc., New York (1985).

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