1. High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
2. InGaAs/InGaAlAs MQW lasers with InGaAsP guiding layers grown by gas source molecular beam epitaxy
3. [3] P. J. A. Thijs, T. van Dongen, J. J. M. Binsma, and E. J. Jansen, “High performance buried heterostructure 1.5µm InGaAs/AlGaInAs strained-layer quantum well lasers diodes, ” Proc. Indium Phosphide and Related Materials, pp. 765-768, 1996.
4. [4] T. Tanbun-Ek, S. N. G. Chu, P. W. Wisk, R. Pawelek, A. M. Sergent, J. Minch, E. Young, and S. L. Chuang., “High performance buried heterostructure 1.55µm wavelength AlGaInAs/InP multiple quantum well lasers grown entirely by MOVPE technique, ” Proc. Indium Phosphide and Related Materials, pp. 702-705, 1998.
5. 1.3-μm AlGaInAs buried-heterostructure lasers