Photoexcitation Effects on the Growth Rate in the Vapor Phase Epitaxial Growth of GaAs-Reference-Cited by-同舟云学术

Photoexcitation Effects on the Growth Rate in the Vapor Phase Epitaxial Growth of GaAs

Published:1985-08-01 Issue:8 Volume:132 Page:1939-1942
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Nishizawa J.¹²³,Kokubun Y.¹²³,Shimawaki H.¹²³,Koike M.¹²³

Affiliation:

1. Research Development Corporation of Japan, Exploratory Research for Advanced Technology, Nishizawa Perfect Crystal Project, Semiconductor Research Institute, Kawauchi, Sendai 980, Japan

2. Research Institute of Electrical Communication, Tohoku University, Katahira, Sendai 980, Japan

3. Semiconductor Research Institute, Kawauchi, Sendai 980, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2114257/pdf

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