Low temperature growth of GaAs and AlAs by direct reaction between GaCl3, AlCl3 and AsH3
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Deposition of high quality GaAs films at fast rates in the LP-CVD system
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2. Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy;ACS Applied Energy Materials;2019-12-12
3. Hydride Vapor Phase Epitaxy for Current III–V and Nitride Semiconductor Compound Issues;Handbook of Crystal Growth;2015
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