Quasi Two-Dimensional Si-O Superlattices: Atomically Controlled Growth and Electrical Properties-Reference-Cited by-同舟云学术

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Quasi Two-Dimensional Si-O Superlattices: Atomically Controlled Growth and Electrical Properties

Published:2016 Issue:7 Volume:5 Page:P396-P403
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Jayachandran Suseendran,Simoen Eddy,Martens Koen,Meersschaut Johan,Bender Hugo,Caymax Matty,Vandervorst Wilfried,Heyns Marc,Delabie Annelies

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional gas of massless Dirac fermions in graphene

3. Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)

4. Silicene field-effect transistors operating at room temperature

5. Experimental Evidence for Epitaxial Silicene on Diboride Thin Films

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of Electron Traps Associated With Oxygen Superlattices in n‐Type Silicon;physica status solidi c;2017-09-28

2. A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice;physica status solidi (b);2016-10-07

3. Valence Band Profile in Two-Dimensional Silicon-Oxygen Superlattices Probed by Internal Photoemission;ECS Journal of Solid State Science and Technology;2016

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