Temperature Effect on the Optoelectronic Properties of GaN-based Light-Emitting Diodes with ITO p-Contacts-Reference-Cited by-同舟云学术

Temperature Effect on the Optoelectronic Properties of GaN-based Light-Emitting Diodes with ITO p-Contacts

Published:2007 Issue:5 Volume:154 Page:J155
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Su Shui-Hsiang,Hou Cheng-Chieh,Yokoyama Meiso,Shieh Ruei-Shiang,Chen Shi-Ming

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Investigation of GaN LED with Be-implanted Mg-doped GaN layer

2. The effect of p-GaN:Mg layers on the turn-on voltage of p–n junction LED

3. GaN-based blue laser diodes

4. High-power GaN MESFET on sapphire substrate

5. Self-Heating and Trapping Effects on the RF Performance of GaN MESFETs

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