Investigation of GaN LED with Be-implanted Mg-doped GaN layer-Reference-Cited by-同舟云学术

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Investigation of GaN LED with Be-implanted Mg-doped GaN layer

Published:2004-10 Issue:1 Volume:113 Page:19-23
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Huang Hung-Wen,Kao C.C.,Chu J.T.,Kuo H.C.,Wang S.C.,Yu C.C.,Lin C.F.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Ion implantation doping and isolation of GaN

2. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

3. Nitride-based semiconductors for blue and green light-emitting devices

4. The blue laser diode–gallium-nitride based light emitters and laser;Nakamura,1997

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1. Effect of Bow Tie Type Silver Metal Array Structure on Light Extraction Efficiency of GaN-Based Light Emitting Diodes;ACTA OPT SIN;2021

2. Micro-Raman investigation on the size effects of surface optical phonon modes in single cone-shape InGaN/GaN microrods;Applied Surface Science;2020-05

3. Photoluminescence enhancement from GaN by beryllium doping;Optical Materials;2016-10

4. Effects of extrusion treatment on physicochemical properties and in vitro digestion of pregelatinized high amylose maize flour;Journal of Cereal Science;2016-03

5. Investigation of the ultrastructural characteristics of foxtail and broomcorn millet during carbonization and its application in archaeobotany;Chinese Science Bulletin;2011-05

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