1. Tsu R. McPherson J. W. McKee W. R. , “Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process,” IEEE Int. Reliability Physics Symposium (IRPS), p. 348, 2000.
2. Ogawa E. T. Kim J. Haase G. S. Mogul H. C. McPherson J. W. , “Leakage, breakdown and TDDB characteristics of porous low-k silica-based interconnect dielectrics,” IEEE Int. Reliability Physics Symposium (IRPS), p. 3B.1, 2003.
3. Electron fluence driven, Cu catalyzed, interface breakdown mechanism for BEOL low-k time dependent dielectric breakdown
4. Lee S. C. Oates A. S. Chang K. M. “ Fundamental understanding of porous low-k dielectric breakdown,” IEEE Int. Reliability Physics Symposium (IRPS), p. 481, 2009.
5. Barbarin Y. Croes K. Roussel Ph. Li Y. Zhao L. Verdonck P. Baklanov M. Tőkei Zs. , “Reliability Characteristics Of Thin Porous Low-K Silica-Based Interconnect Dielectrics,” IEEE Int. Reliability Physics Symposium (IRPS), p. 2F.3, 2013.