Author:
Tack Marnix,Moens Peter,Liu Charlie,Bauwens Filip
Abstract
This paper reports on an industrial 650V GaN DHEMT cascode technology. 650V rated DHEMT power transistors are fabricated on GaN-on-Si wafers in a standard CMOS production line. The MISHEMT transistors use in-situ MOCVD grown SiN as surface passivation and gate dielectric. Detailed characterization is done on static and dynamic behavior demonstrating good performing power transistors. DHEMT transistors are mounted in a cascode configuration to realize a normally-off power switch. The basic functionality of this cascode switch is demonstrated through implementation in a 300W 100kHz PFC system. Additional in-depth study is performed through virtual prototyping and testing, revealing challenges such as cascode mid node voltage dynamics.
Publisher
The Electrochemical Society
Cited by
6 articles.
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