Author:
Yoshikawa Kazuhiro,Miyazaki Takumi,Watanabe Naoya,Aoyagi Masahiro
Abstract
We proposed the wet-chemical Si wafer-thinning process and evaluated the damage caused by this process. For the damage evaluation, we measured the die fracture stress and fracture energy, and compared various wafer-thinning processes (backgrinding, wet-chemical Si wafer-thinning, backgrinding + chemical mechanical polishing, backgrinding + wet etching). The result of comparative study shows that wet-chemical wafer-thinning process has very high fracture stress/energy and demonstrates that the damage of wet-chemical Si wafer-thinning process is very small.
Publisher
The Electrochemical Society
Cited by
4 articles.
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