Fundamental Study on the Selective Etching of Al0.25Ga0.75As Versus GaAs in Acidic Iodine Solutions

Author:

Verpoort P. J.1,Vermeir I. E.1,Gomes W. P.1

Affiliation:

1. Laboratorium voor Fysische Chemie, Universiteit Gent, B‐9000 Gent, Belgium

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Photoelectrolysis of water to hydrogen in p-SiC/Pt and p-SiC/ n-TiO2 cells;International Journal of Hydrogen Energy;2002-09

2. Wet etching of III–V semiconductors;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

3. Chapter 6 Wet etching of III–V semiconductors;Processing and Properties of Compound Semiconductors;2001

4. Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al/sub 0.3/Ga/sub 0.7/As gate ins;IEEE Transactions on Reliability;2000-06

5. The Development of a Highly SelectiveKI/I2/H2O/H2SO4Etchant for the Selective Etching ofAl0.3Ga0.7As over GaAs;Japanese Journal of Applied Physics;1997-06-15

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