Comparison of F 2‐Based Gases for High‐Rate Dry Etching of Si-Reference-Cited by-同舟云学术

Comparison of F 2‐Based Gases for High‐Rate Dry Etching of Si

Published:1999-10-01 Issue:10 Volume:146 Page:3812-3816
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Hays D. C.¹,Jung K. B.¹,Hahn Y. B.¹,Lambers E. S.¹,Pearton S. J.¹,Donahue J.²,Johnson D.²,Shul R. J.³

Affiliation:

1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States of America

2. Plasma Therm, St. Petersburg. Florida 33716, United States of America

3. Sandia National Laboratories, Albuquerque, New Mexico 87185, United States of America

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1392556/pdf

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