AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

Published:2017 Issue:11 Volume:6 Page:S3078-S3080
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Ren Fan,Pearton Stephen J.,Ahn Shihyun,Lin Yi-Hsuan,Machuca Francisco,Weiss Robert,Welsh Alex,McCartney Martha R.,Smith David J.,Kravchenko Ivan I.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference11 articles.

1. 30-W/mm GaN HEMTs by Field Plate Optimization

2. 100 nm gate AlGaN/GaN HEMTs on silicon with fT=90 GHz

3. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

4. GaN: Processing, defects, and devices

5. Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer;Applied Physics B;2023-05-24

2. Comparative studies on the DC and RF performances of conventional HEMT and double quantum well heterostructure;Optical and Quantum Electronics;2021-02

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3