Author:
Anderson Travis J,Koehler Andrew D,Tadjer Marko J,Hobart Karl D,Specht Petra,Porter Matthew,Weatherford Todd R,Weaver Brad,Hite Jennifer K.,Kub Fritz J
Abstract
The reliability of AlGaN/GaN HEMTs is currently a limiting factor in the development of next-generation power amplifier technology. In this work, we use atomic-resolution transmission electron microscopy (TEM) to directly image the defects associated with device failure. Furthermore, we attempt to induce defects through electrical and radiation-induced stress on the device, and compare the mechanism for failure by TEM analysis.
Publisher
The Electrochemical Society
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献