High-Temperature and High-Frequency Operation of 1.3 μm AlGaInAs∕InP Laser Diodes Using Silicon Oxide Planarization-Reference-Cited by-同舟云学术

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High-Temperature and High-Frequency Operation of 1.3 μm AlGaInAs∕InP Laser Diodes Using Silicon Oxide Planarization

Published:2007 Issue:5 Volume:154 Page:H380
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Peng Te-Chin,Yang Chih-Chao,Huang Yun-Hsun,Wu Meng-Chyi

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. 10 Gbit∕s transmitter based on directly modulated InGaAlAs laser operating up to 126°C

2. Temperature dependence of threshold of InGaAsP/InP double‐heterostructure lasers and Auger recombination

3. Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum‐well lasers

4. The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band Absorption

5. Carrier leakage and temperature dependence of InGaAsP lasers

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