High Performance Photoresist Planarization Process by CMP with Resin Abrasive for Trench-First Cu/Low-k Dual Damascene Process-Reference-Cited by-同舟云学术

High Performance Photoresist Planarization Process by CMP with Resin Abrasive for Trench-First Cu/Low-k Dual Damascene Process

Published:2009 Issue:7 Volume:156 Page:H548
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Matsui Yukiteru,Seta Satoko,Kinoshita Masako,Tateyama Yoshikuni,Shigeta Atsushi,Nishioka Takeshi,Yano Hiroyuki,Shida Hirotaka,Nishimoto Kazuo,Masuko Masabumi

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference4 articles.

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2. Y. Matsui, G. Minamihaba, Y. Tateyama, K. Takahata, A. Shigeta, T. Nishioka, H. Yano, and N. Hayasaka , inProceedings of the IITC, IEEE Electron Devices Society, p. 162–164 (2005).

3. R. Kanamura, Y. Ohoka, M. Fukasawa, K. Tabuchi, K. Nagahata, S. Shibuki, M. Muramatsu, H. Miyajima, T. Usui, A. Kajita, et al. , inSymposium on VLSI Technology, Japan Society of Applied Physics, pp. 107 and 108 (2003).

4. K. Higashi, N. Nakamura, H. Miyajima, S. Satoh, A. Kojima, J. Abe, K. Nagahata, T. Tatsumi, K. Tabuchi, T. Hasegawa, et al. , inProceedings of IITC, IEEE Electron Devices Society, pp. 15–17 (2002).

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