Author:
Aureau Damien,Chaghi Radhouane,Etcheberry Arnaud
Abstract
This manuscript presents the issues associated with the surface chemistry of a low band gap III-V semiconductor, the indium antimony InSb. The composition and the quantity of surface oxide obtained by electrochemical or electroless processes are especially discussed. XPS data suggest that mixed oxide of various morphology are obtained when the etching is driven by di-halogen etchants compared to the Sb-rich oxides obtained by anodic oxidation in acidic media.
Publisher
The Electrochemical Society
Cited by
4 articles.
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