A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films-Reference-Cited by-同舟云学术

A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films

Published:2006 Issue:9 Volume:9 Page:G282
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Kwon Jung-Dae,Park Jin-Seong,Lee Han-Choon,Kang Sang-Won

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference14 articles.

1. Properties of reactively sputter-deposited TaN thin films

2. Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions

3. C. Knepfler and M. Chang , Abstract 46 , The Electrochemical Society Meetings Abstracts, Vol. 2005-2, G2, p. 457, Los Angeles, CA, Oct 16–21 (2005).

4. C. Basceri, M. W. Miller, P. Castrovillo, V. D. Hou, K. Holtzclaw, J. Smythe, G. Derderian, S. Ramarajan, S. W. Russell, and G. Sandhu , Proceedings of Advanced Metallization Conference , Montreal, p. 713, Oct 21–23 (2003).

5. Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films

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