Reevaluation of Hydrogen Gas Dissolved Cleaning Solutions in Single Wafer Megasonic Cleaning
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Published:2009-09-25
Issue:5
Volume:25
Page:273-279
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Kang Bong-Kyun,Lee Seung-Ho,Kim In-Jung,Choi Eun-Suck,Kim Bong-Woo,Busnaina Ahmed A.,Hattori Takeshi,Park Jin-Goo
Abstract
In this study, the capability of hydrogenated DI water was reevaluated to apply instead of conventional cleaning process to the semiconductor and FPD (flat panel display) industries. Its characteristics such as half life time, ORP (oxidation reduction potential), DO (dissolved oxygen) concentration, pH, and surface tension were measured as a function of hydrogen gas concentration. Also, hydrogenated DI water cleaning efficiency with addition of NH4OH by combining with MS (megasonic) was compared with cleaning efficiency of SC-1 and DI water. It was found that H2-DIW would be a valuable cleaning solution to avoid higher chemical consumption with better PRE than conventional cleaning solution.
Publisher
The Electrochemical Society
Cited by
2 articles.
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