Defects in Silicon Crystals and Their Impact on DRAM Device Characteristics-Reference-Cited by-同舟云学术

Defects in Silicon Crystals and Their Impact on DRAM Device Characteristics

Published:2002 Issue:4 Volume:149 Page:G226
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Dornberger E.,Temmler D.,von Ammon W.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. J. G. Park and H. K. Chung, inProceedings of the Silicon Wafer Symposium, Semiconductor Equipment and Materials International, D-1 (1999).

2. D. Gilles and H. Ewe, inSemiconductor Silicon 1994, H. R. Huff, W. Bergholz, and K. Sumino, Editors, PV 94-10, p. 772, The Electrochemical Society Proceedings Series, Pennington, NJ (1994).

3. The composition of octahedron structures that act as an origin of defects in thermal SiO2on Czochralski silicon

4. K. Nakamura, inProceedings of the Silicon Wafer Symposium, Semiconductor Equipment and Materials International, I1 (1998).

5. W. von Ammon, D. Gräf, R. Schmolke, M. Blietz, and G. Obermeier, Unpublished work.

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