Oxidation Enhanced Diffusion of Boron in Silicon‐on‐Insulator Substrates-Reference-Cited by-同舟云学术

Oxidation Enhanced Diffusion of Boron in Silicon‐on‐Insulator Substrates

Published:1997-11-01 Issue:11 Volume:144 Page:4022-4026
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Pindl S.¹²,Biebl M.³,Hammerl E.¹,Schäfer H.¹,von Philipsborn H.²

Affiliation:

1. Siemens AG, Department ZT ME1, D‐81730 München, Germany

2. Fakultät Physik, Universität Regensburg, D‐93040 Regensburg, Germany

3. Siemens AG, Department HL SP PE DES, D‐81617 München, Germany

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1838129/pdf

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical Calculation Model of Single Wafer Wet Etcher Using Swinging Nozzle;ECS Transactions;2013-08-31

2. Surface Chemical Reaction Model of Silicon Dioxide Film Etching by Dilute Hydrogen Fluoride Using a Single Wafer Wet Etcher;ECS Journal of Solid State Science and Technology;2013

3. Numerical calculation model of a single wafer wet etcher using a swinging nozzle;Materials Science in Semiconductor Processing;2012-10

4. Influence of Doping Gradient near a Channel End on Parasitic Series Resistance of Thin-Film Fully-Depleted Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2004-10-08

5. Boron Diffusion and Silicon Self-Interstitial Recycling between SiGeC layers;MRS Proceedings;2004