Electron Traps in SiO2 Grown in the Presence of Trichloroethylene-Reference-Cited by-同舟云学术

Electron Traps in SiO2 Grown in the Presence of Trichloroethylene

Published:1982-12-01 Issue:12 Volume:129 Page:2772-2778
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Bhattacharyya A. B.¹²,Manchanda L.¹²,Vasi J.¹²

Affiliation:

1. Center for Applied Research in Electronics, Indian Institute of Technology, New Delhi 110016, India

2. Department of Electrical Engineering, Indian Institute of Technology, Powai, Bombay, India

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2123677/pdf

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1. Electron trapping during irradiation in reoxidized nitrided oxide;IEEE Transactions on Nuclear Science;1993-12

2. Trap‐assisted conduction in nitrided‐oxide and re‐oxidized nitrided‐oxiden‐channel metal‐oxide‐semiconductor field‐effect transistors;Journal of Applied Physics;1993-06-15

3. Study of Electron Traps in Silicon Dioxide due to Mobile Sodium Ions at the Si-SiO2Interface;IETE Journal of Research;1987-01

4. Investigation of surface mobility in thin‐gate oxide metal‐oxide‐semiconductor field‐effect transistors;Journal of Applied Physics;1985-12

5. High temperature annealing behavior of electron traps in thermal SiO2;Solid-State Electronics;1984-08