Trap‐assisted conduction in nitrided‐oxide and re‐oxidized nitrided‐oxiden‐channel metal‐oxide‐semiconductor field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354086
Reference23 articles.
1. Off-state gate current in n-channel MOSFETs with nitrided oxide gate dielectrics
2. Interface trap-enhanced gate-induced leakage current in MOSFET
3. Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor
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