An Investigation of the Application of Porous Silicon Layers to the Dielectric Isolation of Integrated Circuits-Reference-Cited by-同舟云学术

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An Investigation of the Application of Porous Silicon Layers to the Dielectric Isolation of Integrated Circuits

Published:1979-05-01 Issue:5 Volume:126 Page:870-874
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Teng T. C.¹

Affiliation:

1. Signetics Corporation, Sunnyvale, California 94086

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2129158/pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-oxidized porous silicon-based power AC switch peripheries;Nanoscale Research Letters;2012-10-11

2. Oxidized porous silicon: From dielectric isolation to integrated optical waveguides;Journal of Porous Materials;2000

3. References;Thin Films by Chemical Vapour Deposition;1990

4. A new formation process of anodizable structures of n, n+, and n− silicon for the production of silicon-on-insulator structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1988-09

5. The kinetics and mechanism of oxide layer formation from porous silicon formed onp‐Si substrates;Journal of Applied Physics;1987-08

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