The kinetics and mechanism of oxide layer formation from porous silicon formed onp‐Si substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339761
Reference11 articles.
1. The n+-IPOS scheme and its applications to IC's
2. The n+-IPOS scheme and its applications to IC's
3. Formation and oxidation of porous silicon by anodic reaction
4. Oxidation of Porous Silicon and Properties of Its Oxide Film
5. An Investigation of the Application of Porous Silicon Layers to the Dielectric Isolation of Integrated Circuits
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