The Effect of Nb Incorporation on the Electronic Properties of Anodic HfO2-Reference-Cited by-同舟云学术

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The Effect of Nb Incorporation on the Electronic Properties of Anodic HfO2

Published:2017 Issue:4 Volume:6 Page:N25-N31
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Zaffora Andrea,Franco Francesco Di,Quarto Francesco Di,Macaluso Roberto,Mosca Mauro,Habazaki Hiroki,Santamaria Monica

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference50 articles.

1. High-K materials and metal gates for CMOS applications

2. Theoretical Prediction of Intrinsic Self-Trapping of Electrons and Holes in MonoclinicHfO2

3. Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors

4. Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

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1. The Effect of Anodizing Bath Composition on the Electronic Properties of Anodic Ta-Nb Mixed Oxides;Nanomaterials;2022-12-14

2. The Effect of Electronic Properties of Anodized and Hard Anodized Ti and Ti6Al4V on Their Reactivity in Simulated Body Fluid;Journal of The Electrochemical Society;2022-07-01

3. Composite Memristors by Nanoscale Modification of Hf/Ta Anodic Oxides;The Journal of Physical Chemistry Letters;2021-09-09

4. Phosphate incorporation in anodic hafnium oxide memristors;Applied Surface Science;2021-05

5. Tuning of the Mg Alloy AZ31 Anodizing Process for Biodegradable Implants;ACS Applied Materials & Interfaces;2021-03-11

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