Composite Memristors by Nanoscale Modification of Hf/Ta Anodic Oxides-Reference-Cited by-同舟云学术

Composite Memristors by Nanoscale Modification of Hf/Ta Anodic Oxides

Published:2021-09-09 Issue:37 Volume:12 Page:8917-8923
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Zrinski Ivana¹,Minenkov Alexey²^ORCID,Mardare Cezarina Cela¹³^ORCID,Hassel Achim Walter¹³^ORCID,Mardare Andrei Ionut¹^ORCID

Affiliation:

1. Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria

2. Christian Doppler Laboratory for Nanoscale Phase Transformations, Center for Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria

3. Danube Private University, Steiner Landstrasse 124, 3500 Krems-Stein, Austria

Funder

Austrian Science Fund

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.1c02346

Reference43 articles.

1. Laser-Fabricated Reduced Graphene Oxide Memristors

2. Enhancing Reliability of Studies on Single Filament Memristive Switching via an Unconventional cAFM Approach

3. Towards engineering in memristors for emerging memory and neuromorphic computing: A review

4. A multilevel memristor–CMOS memory cell as a ReRAM

5. TiO2-based memristors and ReRAM: materials, mechanisms and models (a review)

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of Anodic Tantalum Oxide Nanostructures: From Morphological Design to Emerging Applications;ACS Applied Nano Materials;2024-06-18

2. Anodic Niobium–Titanium Oxide Crossbar Memristor Arrays for pH Sensing in Liquids;physica status solidi (a);2024-02-04

3. Ionic memristive effects on the nanometre scale in metal oxides: Understanding the process of valence change;Scientific Herald of Uzhhorod University Series Physics;2023-11-15

4. Coexistence of memory and threshold resistive switching identified by combinatorial screening in niobium-tantalum system;Applied Surface Science;2023-03

5. Threshold Switching in Forming-Free Anodic Memristors Grown on Hf–Nb Combinatorial Thin-Film Alloys;Nanomaterials;2022-11-09