CMP Process Control for Advanced CMOS Device Integration

Abstract

New CMP steps are required to define the structures for new integration schemes for high-k metal gate and FinFET. The performance and yield of these new devices directly depend on CMP control of film thickness variation. As a consequence, CMP requirements are becoming increasingly stringent. This paper highlights the new process control technologies which enable efficient and cost-effective solutions for the new CMP steps, including FullVision® endpoint & in situ profile control (ISPC) for dielectric and poly CMP, and real-time profile control (RTPC) for aluminum, tungsten, and copper CMP.