Author:
Hikavyy Andriy Y.,Vanherle Wendy,Dekoster Johan,Witters Liesbeth,Hoffmann Thomas,Loo Roger
Abstract
Although selective epitaxial growth (SEG) of Si and SiGe is a recognized technology used by the semiconductor industry, continuing device scaling and appearance of new architectures impose new, more stringent and challenging requirements to it. SiGe growth with high Ge concentrations, layers integration in 3D structures, growth on alternatively oriented Si wafers and decrease of thermal budget are only few trends which we would like to address in this article. Problematic points raising concerns from the epi point of view are highlighted and solutions used at Imec are described in detail together with once proposed in literature.
Publisher
The Electrochemical Society
Cited by
4 articles.
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