Possible Models of Electron-Energy Transfer in Resistance Switching by Sputter-Deposited Silicon Oxide Films: Potential of Extremely Low-Energy Switching-Reference-Cited by-同舟云学术

Possible Models of Electron-Energy Transfer in Resistance Switching by Sputter-Deposited Silicon Oxide Films: Potential of Extremely Low-Energy Switching

Published:2018 Issue:3 Volume:7 Page:Q21-Q25
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Omura Yasuhisa^ORCID,Akano Takuya,Sato Shingo

Funder

Kansai University

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Resistive switching in transition metal oxides

2. Recent Advances and Future Prospects in Functional-Oxide Nanoelectronics: The Emerging Materials and Novel Functionalities that are Accelerating Semiconductor Device Research and Development

3. Yanagida T. Nagashima K. Oka K. Kanai M. Klamchuen A. Park B. H. Kawai T. , Sci. Rep., 3(1657) (2013).

4. Yu S. Guan X. Wong H.-S. P. , Tech. Dig., IEEE IEDM (San Francisco (2011), p. 413.

5. On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy

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1. Theoretical model and simulations to extract chemical reaction parameters ruling resistive switching in sputter-deposited silicon oxide film on Si substrate;Journal of Applied Physics;2023-08-10

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3. Possible Equivalent Circuit Model and Physical Structures of Sputter-Deposited Silicon Oxide Film Showing Resistive Switching;ECS Journal of Solid State Science and Technology;2021-12-01

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