The Deposition of Ru and RuO2 Films for DRAM Electrode

Abstract

Ru and RuO2 films were deposited from Torus, a blend of RuO4. At low hydrogen dose RuO2 films were deposited at 200ºC. With sufficient dosing of hydrogen, Ru films were obtained; either a high enough hydrogen pressure or plasma was used. Process temperatures between 100ºC and 250ºC were explored. At 100ºC the process behaves like ALD, while at 200ºC thermal decomposition is dominating. Above 200ºC the decomposition of RuO4 increases rapidly. The deposited films are smooth and with low impurities.