Ultraclean Si/Si Interface Formation by Surface Preparation and Direct Bonding in Ultrahigh Vacuum-Reference-Cited by-同舟云学术

Ultraclean Si/Si Interface Formation by Surface Preparation and Direct Bonding in Ultrahigh Vacuum

Published:1998-05-01 Issue:5 Volume:145 Page:1645-1649
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Hermansson Karin¹²³⁴,Grey François¹²³⁴,Bengtsson Stefan³,Södervall Ulf⁴

Affiliation:

1. BCO Technologies (NI) Limited, Belfast BT11 8BU, Northern Ireland

2. Microelectronics Center, Technical University of Denmark, DK‐2800 Lyngby, Denmark

3. Department of Solid State Electronics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden

4. SIMS‐laboratory, Department of Physics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1838530/pdf

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