A Comprehensive Optimization of InAlAs Molecular Beam Epitaxy for InGaAs / InAlAs HEMT Technology-Reference-Cited by-同舟云学术

A Comprehensive Optimization of InAlAs Molecular Beam Epitaxy for InGaAs / InAlAs HEMT Technology

Published:1993-05-01 Issue:5 Volume:140 Page:1503-1509
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Georgakilas A.¹²³⁴,Halkias G.¹²³⁴,Christou A.¹²³⁴,Kornilios N.¹²³⁴,Papavassiliou C.¹²³⁴,Zekentes K.¹²³⁴,Konstantinidis G.¹²³⁴,Peiró F.¹²³⁴,Cornet A.¹²³⁴,Ababou S.¹²³⁴,Tabata A.¹²³⁴,Guillot G.¹²³⁴

Affiliation:

1. Microelectronics Devices Laboratory, CALCE Electronic Packaging Research Center, University of Maryland, College Park, Maryland 20742

2. Microelectronics Research Laboratory, Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology‐Hellas (FORTH), 711 10 Heraklion, Crete, Greece

3. Laboratori de Caracterització de Materials per la Microelectronica (LCMM), Departament de Física Aplicada i Electrònica, Universitat de Barcelona, 08028 Barcelona, Spain

4. Laboratoire de Physique de la Matière (URA CNRS 358), Institut National des Sciences Appliquées de Lyon, 69621 Villeurbanne Cedex, France

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2221587/pdf

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