Correlation between the sign of strain and the surface morphology and defect structure of InA1As grown on vicinal (111)BInP-Reference-Cited by-同舟云学术

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Correlation between the sign of strain and the surface morphology and defect structure of InA1As grown on vicinal (111)BInP

Published:1998-12 Issue:1-2 Volume:336 Page:218-221
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Georgakilas A,Tsagaraki K,Harteros K,Hatzopoulos Z,Vilà Anna,Bécourt N,Peiro F,Cornet A,Chrysanthakopoulos N,Calamiotou M

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure

2. Conduction‐band engineering in piezoelectric [111] multiple quantum wellp‐i‐nphotodiodes

3. Electroabsorption modulation in strained piezoelectric InGaAs/InP multiquantum wells operating at λ ≃ 1.55 µm

4. InP and InAsP/InP heterostructures grown on InP (111) B substrates by gas-source molecular beam epitaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy;Materials Science and Engineering: B;2001-03

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