A Dry Development Model for a Positive Electron Beam Resist-Reference-Cited by-同舟云学术

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A Dry Development Model for a Positive Electron Beam Resist

Published:1982-11-01 Issue:11 Volume:129 Page:2598-2602
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Yamada M.¹²,Hattori S.¹²,Morita S.¹²

Affiliation:

1. Department of Electronic Engineering, Nagoya University Chikusa‐ku, Nagoya 464, Japan

2. Department of Electrical Engineering, Meijo University Tenpaku‐ku, Nagoya 468, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2123627/pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct Laser Writing Dry Lithography of High‐Resolution Micro‐/Nanostructures in AgSb₄Te Thin Film for Tunable Perfect Absorber;physica status solidi (RRL) – Rapid Research Letters;2023-12-24

2. CrSb2Te thin film as a dry resist and its etching mechanism for lithography application;Materials Chemistry and Physics;2021-07

3. Plasma Etching of Organic Polymers;Plasma Deposition, Treatment, and Etching of Polymers;1990

4. Applications of Plasma Polymers;Plasma Deposition, Treatment, and Etching of Polymers;1990

5. Developing Resist Images;Semiconductor Lithography;1988

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