Evaluation of Gadolinium Oxide as a Blocking Layer of Charge-Trap Flash Memory Cell

Author:

Pu Jing,Kim Sun-Jung,Kim Young-Sun,Cho Byung Jin

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effect of gadolinium doping on the Structural, magnetic, Electrical, Optical, and elastic properties of magnetite nanoparticles;Materials Science and Engineering: B;2023-10

2. Thermal Oxidation of Gd2O3;Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets;2017

3. Introduction;Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets;2017

4. Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering;Microelectronic Engineering;2011-09

5. Scalable processes for fabricating non-volatile memory devices using self-assembled 2D arrays of gold nanoparticles as charge storage nodes;Nanoscale;2011

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