Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer-Reference-Cited by-同舟云学术

Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer

Published:2004-04 Issue:1-4 Volume:72 Page:283-287
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Hattori T,Yoshida T,Shiraishi T,Takahashi K,Nohira H,Joumori S,Nakajima K,Suzuki M,Kimura K,Kashiwagi I,Ohshima C,Ohmi S,Iwai H

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Periodicity in the band gap variation of Ln2X3 (X = O, S, Se) in the lanthanide series

3. Dielectric polarizabilities of ions in oxides and fluorides

4. T. Shiraishi, T. Nakamura, K. Takahashi, I. Kashiwagi, C. Ohshima, H. Nohira, S. Ohmi, H. Iwai, T. Hattori, Depth profiling of high-k dielectric/Si interfacial transition layer, in: Ext. Abstract of International Conference on Solid State Devices and Materials, Nagoya, 2002, pp. 758–759

5. Monolayer analysis in Rutherford backscattering spectroscopy

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