Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference13 articles.
1. High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices
2. Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer
3. Design of edge termination for GaN power Schottky diodes
4. 3.7 kV Vertical GaN PN Diodes
5. Baliga J. , Fundamentals of Power Semiconductor Devices, Springer, pp. 149 (2008).
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