Rapid Activation of Phosphorous-Implanted Polycrystalline Si Thin Films on Glass Substrates Using Flash-Lamp Annealing-Reference-Cited by-同舟云学术

Rapid Activation of Phosphorous-Implanted Polycrystalline Si Thin Films on Glass Substrates Using Flash-Lamp Annealing

Published:2014 Issue:11 Volume:3 Page:P391-P395
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Choi Jeong-Wan,Jin Weon-Bum,Bae Seung-Muk,You Yil-Hwan,Kim Hyoung-June,Kim Byeong-Kook,Kwon Yongwoo,Park Seungho,Hwang Jin-Ha

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Low-Temperature Polycrystalline Silicon Thin-Film Transist or Technologies for System-on-Glass Displays

2. Kanzaki K. , “Poly-Si TFT Technology for System on Glass,” International Workshop on Active-Matrix. Liquid-Crystal Displays/2001 Digest of Technical Papers, Japan Society of Applied Physics, Tokyo, p. 71. 2001.

3. Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing

4. Dopant activation after ion shower doping for the fabrication of low-temperature poly-Si TFTs

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