Controlling the Removal Rate Selectivity of Ruthenium to Copper during CMP by Using Guanidine Carbonate and 1, 2, 4-Triazole-Reference-Cited by-同舟云学术

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Controlling the Removal Rate Selectivity of Ruthenium to Copper during CMP by Using Guanidine Carbonate and 1, 2, 4-Triazole

Published:2018 Issue:10 Volume:7 Page:P567-P574
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Wang Qingwei^ORCID,Zhou Jianwei,Wang Chenwei,Niu Xinhuan,Tian Qiyuan^ORCID,Xiao Yue^ORCID,Wang Ru

Funder

National Science and Technology Special Projects

Scientific Innovation grant for Excellent Young Scientists of Hebei University of Technology

Graduation Innovation Project of Hebei Province of China

Hebei Province Science and Technology plan Projects

Collrges and universities of Hebei province reaserch projects

Postdoctoral priority projects of Hebei province

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Ruthenium Polishing Using Potassium Periodate as the Oxidizer and Silica Abrasives

2. Controlling the Galvanic Corrosion of Copper during Chemical Mechanical Planarization of Ruthenium Barrier Films

3. Study of Ruthenium Oxides Species on Ruthenium Chemical Mechanical Planarization Using Periodate-Based Slurry

4. Potassium Bromate as an Oxidizing Agent in a Titania-Based Ru CMP Slurry

5. Fabrication of ruthenium thin film and characterization of its chemical mechanical polishing process

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1. The corrosion inhibition performance and mechanism of α-benzoin oxime on copper: A comprehensive study of experiments and DFT calculations;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2024-11

2. Controllable adjustment of Ta and Cu material removal rate in TSV tantalum-based barrier layer planarization process;Journal of Materials Science;2024-08-27

3. Effect of Novel pH Regulators on Copper film Chemical Mechanical Polishing for Ruthenium-Based Copper Interconnect under Weak Alkalinity Conditions;ECS Journal of Solid State Science and Technology;2024-05-01

4. Synergistic effect of 1,2,4-triazole and phytic acid as inhibitors on copper film CMP for ruthenium - based copper interconnected and the surface action mechanism analysis;Materials Science in Semiconductor Processing;2023-03

5. Role of Diethylene Triaminepentaacetic Acid Pentapotassium Salt on Ruthenium CMP in H₂O₂-Based Slurries;ECS Journal of Solid State Science and Technology;2022-12-01

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