Effects of Hydrogen Peroxide on Chemical Mechanical Polishing of Copper Surface: Exploration of Reaction Pathways with Molecular Dynamics Simulation and Activation Energies Calculation
Author:
Affiliation:
1. Research & Development Group, Hitachi, Ltd.
2. Electronics Business Division, Resonac Corporation
Publisher
Japanese Society of Tribologists
Link
https://www.jstage.jst.go.jp/article/trol/19/3/19_194/_pdf
Reference42 articles.
1. [1] Krishnan M, Nalaskowski JW, Cook LM. Chemical mechanical planarization: Slurry chemistry, materials, and mechanisms. Chem Rev. 2010;110(1): 178-204.
2. [2] Harper JME, Hu C-K. Copper interconnections and reliability. Mater Chem Phys. 1998;52(1): 5-16.
3. [3] Andricacos PC, Uzoh C, Dukovic JO, Horkans J, Deligianni H. Damascene copper electroplating for chip interconnections. IBM J Res Dev. 1998;42(5): 567-573.
4. [4] Lee H, Park B, Jeong H. Influence of slurry components on uniformity in copper chemical mechanical planarization. Microelectron Eng. 2008;85(4): 689-696.
5. [5] Babu SV, Jindal A, Li Y. Chemical-mechanical planarization of Cu and Ta. Jom. 2001;53(6): 50-52.
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