Corrosion at the Grain Boundary and a Fluorine-Related Passivation Layer on Etched Al-Cu (1%) Alloy Surfaces-Reference-Cited by-同舟云学术

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Corrosion at the Grain Boundary and a Fluorine-Related Passivation Layer on Etched Al-Cu (1%) Alloy Surfaces

Published:1999-09-01 Issue:3 Volume:21 Page:16-21
ISSN:1225-6463
Container-title:ETRI Journal
language:en
Short-container-title:ETRI J

Author:

Baek Kyu-Ha Baek,Yoon Yong-Sun Yoon,Park Jong-Moon Park,Kwon Kwang-Ho Kwon,Kim Chang-Il Kim,Nam Kee-Soo Nam

Publisher

Wiley

Subject

Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Reactive ion etching induced corrosion of Al and Al‐Cu films

2. Review of planarization and reliability aspects of future interconnect materials

3. Cu behaviors induced by aging and their effects on electromigration resistance on Al-Cu lines

4. Aluminum Reactive Ion Etching Employing CCl4+Cl2Mixture

5. Mechanism of Corrosion in Al-Si-Cu

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1. Crystalline defect formation on aluminum bond pads during CMOS wafer storage and process strategies for defect elimination;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2018-05

2. Metal Surface Chemical Composition and Morphology;Handbook of Silicon Wafer Cleaning Technology;2018

3. The Role of Atomic Structures on the Oxygen Corrosion of Polycrystalline Copper Surface;Procedia Engineering;2015

4. Characterization of Via Etching in CHF3/CF4Magnetically Enhanced Reactive Ion Etching Using Neural Networks;ETRI Journal;2002-06-01

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