A Novel Process for Fabricating a High Density Trench MOSFETs for DC-DC Converters-Reference-Cited by-同舟云学术

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A Novel Process for Fabricating a High Density Trench MOSFETs for DC-DC Converters

Published:2002-10-01 Issue:5 Volume:24 Page:333-340
ISSN:1225-6463
Container-title:ETRI Journal
language:en
Short-container-title:ETRI J

Author:

Kim Jongdae Kim,Roh Tae Moon Roh,Kim S-G Kim,Park I-Y Park,Yang Yil Suk Yang,Lee D-W Lee,Koo J-G Koo,Cho K-I Cho,Kang YI Kang

Publisher

Wiley

Subject

Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. An overview of smart power technology

2. The behavior of very high current density power MOSFETs

3. Optimization of RESURF LDMOS transistors: an analytical approach

4. Breakdown Voltage Improvement of p-LDMOSFET with an Uneven Racetrack Source for PDP Driver IC Applications

5. A Single-Chip Video/Audio Codec for Low Bit Rate Application

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Charge Plasma Based Dual Buried Gates Power MOSFET with Improved Figure of Merits;Silicon;2024-05-31

2. A Charge Plasma Based Dual Buried Gates Power MOSFET With Improved Figure of Merits;2024-03-19

3. A Uni-gate vertical power MOSFET with improved figure of Merits: Design and analysis;Alexandria Engineering Journal;2023-03

4. A New Vertical Triple Gate Selective Buried Trench Power Mosfet with Additional Inversion Layer: Design and Performance Analysis;2023

5. A Charge Balanced Vertical Power MOSFET with Record High Balliga’s Figure of Merit: Design and Investigation;Silicon;2021-05-25

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