Fabrication and Characteristics of an InP Single HBT and Waveguide PD on Double Stacked Layers for an OEMMIC-Reference-Cited by-同舟云学术

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Fabrication and Characteristics of an InP Single HBT and Waveguide PD on Double Stacked Layers for an OEMMIC

Published:2004-02-12 Issue:1 Volume:26 Page:61-64
ISSN:1225-6463
Container-title:ETRI Journal
language:en
Short-container-title:ETRI J

Author:

Kim Hong Seung,Kim Hye Jin,Hong Sun Eui,Jung Dong Yun,Nam Eunsoo

Publisher

Wiley

Subject

Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs

2. A monolithically integrated photoreceiver compatible with InP/InGaAs HBT fabrication process

3. High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of an Oxidized Porous Silicon Layer by Complex Process Using RTO and the Fabrication of CPW-Type Stubs on an OPSL for RF Application;ETRI Journal;2004-08-12

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