Effects of Channel Electron In-Plane Velocity on the Capacitance-Voltage Curve of MOS Devices
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. MOS capacitance measurements for high-leakage thin dielectrics
2. MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)
3. Iteration scheme for the solution of the two-dimensional Schrödinger-Poisson equations in quantum structures
4. Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models
5. A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions
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